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WP1: Materials
- D1.1: Silicon and III-V substrates evaluation for cryogenic microsystems (due January ’27)
- D1.2: Line resistance & TCR values of actual interconnects (due July ’26)
- D1.3: Report on midlow opacity contacts (due September ’25)
- D1.4: TWPA amplifiers evaluation (due June ’26)
- D1.5: ALD dielectrics and metal nitrides for cryogenic temperatures (due January ’27)
- D1.6: Engineering of defects, workfunction metals and dipoles for cryo gate stack (due September ’26)
- D1.7: Cryomaterials roadmap (due June ’26)
WP1: Materials
- D1.1: Silicon and III-V substrates evaluation for cryogenic microsystems (due January ’27)
- D1.2: Line resistance & TCR values of actual interconnects (due July ’26)
- D1.3: Report on midlow opacity contacts (due September ’25)
- D1.4: TWPA amplifiers evaluation (due June ’26)
- D1.5: ALD dielectrics and metal nitrides for cryogenic temperatures (due January ’27)
- D1.6: Engineering of defects, workfunction metals and dipoles for cryo gate stack (due September ’26)
- D1.7: Cryomaterials roadmap (due June ’26)
WP1: Materials
- D1.1: Silicon and III-V substrates evaluation for cryogenic microsystems (due January ’27)
- D1.2: Line resistance & TCR values of actual interconnects (due July ’26)
- D1.3: Report on midlow opacity contacts (due September ’25)
- D1.4: TWPA amplifiers evaluation (due June ’26)
- D1.5: ALD dielectrics and metal nitrides for cryogenic temperatures (due January ’27)
- D1.6: Engineering of defects, workfunction metals and dipoles for cryo gate stack (due September ’26)
- D1.7: Cryomaterials roadmap (due June ’26)
